MRF8P20161HSR3【PDF 1/13 页】IC MOSFET RF N-CHAN NI-780S

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MRF8P20161HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 1880 to

2025 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

Typical Doherty Single--Carrier W--CDMA Performance: VDD

=28Volts,

IDQA

= 550 mA, VGSB

=1.6Vdc,Pout

= 37 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @

0.01% Probability on CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

1880 MHz

16.5

46.2

6.9

--27.9

1900 MHz

16.5

46.0

6.9

--29.1

1920 MHz

16.4

45.8

7.0

--30.4

Capable of Handling 10:1 VSWR, @ 28 Vdc, 1900 MHz, 142 Watts CW

Output Power (3 dB Input Overdrive from Rated Pout)

Typical Pout

@ 3 dB Compression Point

147 Watts CW

Features

Production Tested in a Symmetrical Doherty Configuration

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Large--Signal Load--Pull Parameters and Common

Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

CW Operation @ TC

=25°C

Derate above 25°C

206

1.86

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 74°C, 37 W CW, 28 Vdc, IDQA

= 550 mA, VGSB

= 1.6 V, 1900 MHz

(4),28Vdc,IDQA

= 550 mA, VGSB

= 1.6 V, 1900 MHz

Case Temperature 93°C, 160 W CW

RθJC

0.76

0.53

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Exceeds recommended operating conditions. See

CW operation data in Maximum Ratings table.

1880--1920 MHz, 37 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFET

MRF8P20161HSR3

(Top View)

GSA

31RFoutA/VDSA

Figure 1. Pin Connections

GSB

42RFoutB/VDSB

RFinA/V

RFinB/V

CASE 465H--02, STYLE 1

NI--780S--4

Document Number: MRF8P20161HS

Rev. 0, 10/2010

Freescale Semiconductor

Technical Data

Freescale Semiconductor, Inc., 2010.

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